Tag Archives: SiC

Interpretation of the fourth generation SiC FET of unitedsic – the minimum RDS (on) is only 6m Ω

Recently, unitedsic announced the release of SiC devices with only 6m Ω on resistance (RDS (on)), which responded to the power supply designers’ pursuit of higher performance and higher efficiency SiC FET. At the same time, unitedsic also announced a … Continue reading

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